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See Technical Specifications

QPD3601

RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN

Manufacturer:

Qorvo
Mfr.Part #:

QPD3601
Datasheet:

QPD3601 Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Operating Frequency:

3.4 GHz to 3.6 GHz

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable QPD3601 driver, produced by Qorvo. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the QPD3601.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN-on-SiC
Operating Frequency	3.4 GHz to 3.6 GHz	Gain	22 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	50 V
Id - Continuous Drain Current	360 mA	Output Power	180 W
Maximum Drain Gate Voltage	55 V	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Pd - Power Dissipation	60.9 W
Mounting Style	SMD/SMT	Configuration	Single
Moisture Sensitive	Yes	Operating Temperature Range	- 40 C to + 85 C
Product Type	RF JFET Transistors	Series	QPD
Factory Pack Quantity	250	Subcategory	Transistors
Vgs th - Gate-Source Threshold Voltage	- 2.7 V	Part # Aliases	1130556