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QPD1013

RF JFET Transistors DC-2.7 GHz, 150W, 65V GaN RF Tr

Manufacturer:

Qorvo
Mfr.Part #:

QPD1013
Datasheet:

QPD1013 Datasheet (PDF)
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Moisture Sensitive:

Yes
Factory Pack Quantity:

100

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

QPD1013 General Description

General DescriptionThe Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.Lead-free and ROHS compliantEvaluation boards are available upon request.

Key Features

Frequency: DC to 2.7 GHz
Output Power (P3dB): 178 W1
Linear Gain: 21.8 dB1
Typical PAE3dB: 64.8 %1
Operating Voltage: 65 V
Low thermal resistance package
CW and Pulse capable
7.2 x 6.6 mm package
Note 1: @ 1.8 GHz (Loadpull)

Specifications

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN-on-SiC	Moisture Sensitive	Yes
Product Type	RF JFET Transistors	Series	QPD1013
Factory Pack Quantity	100	Subcategory	Transistors
Part # Aliases	QPD1013SR