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OPA365AQDBVRQ1

Automotive 2.2V, 50MHz, Low-Noise, Single-Supply Rail-to-Rail Operational Amplifier

Manufacturer:

TI
Mfr.Part #:

OPA365AQDBVRQ1
Datasheet:

OPA365AQDBVRQ1 Datasheet (PDF)
Architecture:

FET / CMOS Input, Voltage FB
Number of channels:

1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):

2.2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):

5.5
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OPA365AQDBVRQ1 General Description

The OPAx365-Q1 zero-crossover family, rail-to-rail, high-performance, CMOS operational amplifiers are optimized for very low voltage, single-supply applications. Rail-to-rail input/output, low noise (4.5 nV/√ Hz) and high speed operation (50-MHz gain bandwidth) make these devices ideal for driving sampling data converters (such as the ADS7822-Q1 or the ADS1115-Q1), specifically in short to mid-range radar applications. The OPAx356-Q1 family of operational amplifiers are also well-suited for HEV/EV and Powertrain applications in DC-DC converters and as transmission control in engine control units.

Special features include an excellent common-mode rejection ratio (CMRR), no input stage crossover distortion, high input impedance, and rail-to-rail input and output swing. The input common-mode range includes both the negative and positive supplies. The output voltage swing is within 10 mV of the rails.

The OPA365-Q1 (single version) is available in the 5-pin SOT-23 package. The OPA2365-Q1 (dual version) is available in the 8-pin SOIC package. All versions are specified for operation from −40°C to 125°C. Single and dual versions have identical specifications for maximum design flexibility.

Key Features

Qualified for Automotive Applications
AEC-Q100 Qualified with the Following Results:
- Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level H2
- Device CDM ESD Classification Level C3B
OPA2365-Q1 Functional Safety-Capable:
- Documentation Available to Aid Functional Safety System Design
Gain Bandwidth: 50 MHz
Zero-Crossover Distortion Topology
- Excellent THD+N: 0.0004%
- CMRR: 100 dB (Minimum)
- Rail-to-Rail Input and Output
- Input 100 mV Beyond Supply Rail
Low Noise: 4.5 nV/√ Hz at 100 kHz
Slew Rate: 25 V/µs
Fast Settling: 0.3 µs to 0.01%
Precision
- Low Offset: 100 µV
- Low Input Bias Current: 0.2 pA
2.2-V to 5.5-V Operation

Specifications

Architecture	FET / CMOS Input, Voltage FB	Number of channels	1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	2.2	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	5.5
GBW (typ) (MHz)	50	BW at Acl (MHz)	50
Acl, min spec gain (V/V)	1	Slew rate (typ) (V/µs)	25
Vn at flatband (typ) (nV√Hz)	4.5	Vn at 1 kHz (typ) (nV√Hz)	4.5
Iq per channel (typ) (mA)	4.6	Vos (offset voltage at 25°C) (max) (mV)	0.2
Rail-to-rail	In, Out	Features	Zero Crossover
Rating	Automotive	Operating temperature range (°C)	-40 to 125
CMRR (typ) (dB)	120	Input bias current (max) (pA)	10
Offset drift (typ) (µV/°C)	1	Iout (typ) (mA)	65