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NXH50C120L2C2ESG

IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity

NXH50C120L2C2ESG General Description

The NXH50C120L2C2ESG is a transfer−molded power modulecontaining a converter−inverter−brake circuit consisting of six 50 A,1600 V rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, one35 A, 1200 V brake IGBT with brake diode and an NTC thermistor.The NXH50C120L2C2ES1G is a transfer−molded power modulecontaining a converter−inverter−brake circuit consisting of six 50 A,1600 V rectifiers, six 50 A, 1200 V IGBTs with inverse diodes and an NTC thermistor.

ON Semiconductor, LLC Inventory

Key Features

  • Low Thermal Resistance
  • 6mm Clearance Distance from Pin to Heatsink
  • Compact 73mm x 40mm x 8mm Package
  • Solderable Pins
ON Semiconductor, LLC Original Stock

Application

  • Industrial Motor Drives
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 181AD
MSL Temp (°C) 0 Container Type TUBE

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NXH50C120L2C2ESG Datasheet PDF

Preliminary Specification NXH50C120L2C2ESG PDF Download

NXH50C120L2C2ESG PDF Preview

Availability: 6555 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $180.204 $180.20
200+ $69.736 $13,947.20
500+ $67.286 $33,643.00
1000+ $66.076 $66,076.00

The prices below are for reference only.