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See Technical Specifications

NVMFS5113PLWFT1G

P-Channel 60 V 10A (Ta), 64A (Tc) 3.8W (Ta), 150W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVMFS5113PLWFT1G
Datasheet:

NVMFS5113PLWFT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for NVMFS5113PLWFT1G

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NVMFS5113PLWFT1G General Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Key Features

Low On-Resistance
High Current Capability
AEC-Q101 Qualified and PPAP Capable
Avalanche Energy Specified
Wettable Flank (WF) Option NVMFS5113PLWF
RoHS Compliant

Application

Power Supply
Solenoid Driver
Load Switch
Motor Driver

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	14mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4400 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	3.8W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NVMFS5113	Product Category	MOSFET
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	64 A	Rds On - Drain-Source Resistance	14 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	83 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	150 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Configuration	Single	Fall Time	77 ns
Forward Transconductance - Min	43 S	Product Type	MOSFET
Rise Time	37 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Typical Turn-Off Delay Time	54 ns
Typical Turn-On Delay Time	15 ns	Unit Weight	0.026455 oz