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NVMFD5C446NLT1G

Mosfet Array 40V 25A (Ta), 145A (Tc) 3.5W (Ta) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVMFD5C446NLT1G
Datasheet:

NVMFD5C446NLT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
Drain to Source Voltage (Vdss):

40V
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NVMFD5C446NLT1G General Description

MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 145A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 125W; Transistor Case Style: DFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Key Features

Small Footprint (5x6 mm)
Low r_DS(on)
Low Q_G and Capacitance
NVMFD5C446NLWF − Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant

Application

Solenoid driver
Low side / high side driver

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	Automotive, AEC-Q101
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	-	Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 145A (Tc)	Rds On (Max) @ Id, Vgs	2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 90µA	Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	3170pF @ 25V	Power - Max	3.5W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NVMFD5