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NTJD1155LT1G SC-88-6 , SC-70-6 , SOT-363-6

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NTJD1155LT1G

P-Channel MOSFET with Level Shift, capable of handling 8V and +/-1.3A

Manufacturer:

Onsemi
Mfr.Part #:

NTJD1155LT1G
Datasheet:

NTJD1155LT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

419B-02
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

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NTJD1155LT1G General Description

MOSFET, N & P-CH, 8V, 1.3A, SC-88-6; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 1.3A; Drain Source Voltage Vds: 8V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 400mW; Transistor Case Style: SC-88; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Key Features

Extremely Low R_DS(on) P-Channel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
V_IN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V

Application

Integrated High Side Load Switch with built in Level Shift
Portable Equipment

Specifications

Status	Active	Compliance	PbAHP
Case Outline	419B-02	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	Y
Channel Polarity	P-Channel	Configuration	Level Shift
V(BR)DSS Min (V)	-8	VGS Max (V)	8
VGS(th) Max (V)	1	ID Max (A)	1.3
PD Max (W)	0.4	RDS(on) Max @ VGS = 2.5 V (mΩ)	170
RDS(on) Max @ VGS = 4.5 V (mΩ)	130	Qg Typ @ VGS = 4.5 V (nC)	1.3
Pricing ($/Unit)	$0.1431Sample