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NSVDTA115EET1G
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
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Manufacturer:
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Mfr.Part #:
NSVDTA115EET1G
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Datasheet:
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Case Outline:
463-01
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MSL Temp (°C):
260
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Container Type:
REEL
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EDA/CAD Models:
Availability: 3774 PCS
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NSVDTA115EET1G General Description
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Key Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Specifications
Status | Active | Case Outline | 463-01 |
MSL Temp (°C) | 260 | Container Type | REEL |
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NSVDTA115EET1G Datasheet PDF
NSVDTA115EET1G PDF Preview
Availability: 3774 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
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