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See Technical Specifications

NSV60600MZ4T1G

Bipolar (BJT) Transistor PNP 60 V 6 A 100MHz 800 mW Surface Mount SOT-223 (TO-261)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NSV60600MZ4T1G
Datasheet:

NSV60600MZ4T1G Datasheet (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

350mV @ 600mA, 6A
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NSV60600MZ4T1G General Description

The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.

Key Features

Low Collector-Emitter Saturation Voltage
High DC Current Gain
High Current-Gain Bandwidth Product
Superior gain linearity
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Application

Linear voltage regulation
Power management for portable devices
Switching regulator
Inductive load driver (e.g. motors, fans, relays)
Linear controls

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	350mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV60600