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See Technical Specifications

NCS20072DR2G

Op Amp Dual GP R-R O/P 36V 8-Pin SOIC N T/R

Manufacturer:

Onsemi
Mfr.Part #:

NCS20072DR2G
Datasheet:

NCS20072DR2G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

751-07
MSL Type:

1
MSL Temp (°C):

260
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NCS20072DR2G General Description

The NCS20072DR2G is a low power, dual operational amplifier designed for use in battery-powered applications and portable devices. It features a wide supply voltage range of 1.6V to 5.5V, making it suitable for a variety of operating conditions. The device has a low quiescent current of 320μA per amplifier, making it energy efficient and ideal for applications where power consumption is a concern.The NCS20072DR2G has a unity gain bandwidth of 1MHz and a slew rate of 0.6V/μs, allowing for fast and accurate signal processing. It also has a CMRR of 80dB and a PSRR of 80dB, ensuring high common-mode and power supply rejection ratios for reliable performance in noisy environments.

Key Features

NCS20072DR2G is a dual N-channel MOSFET

It has a drain-source voltage of 100V

It has a continuous drain current of 190mA

It features low threshold voltage and low ON-resistance

It offers high-speed switching performance

It is suitable for low voltage, high frequency applications

Application

The NCS20072DR2G is a power management IC commonly used in LED lighting applications, such as LED drivers, LED tubes, and LED displays

It is also used in other low-power and battery-powered devices where efficient power conversion and control are required

Specifications

Status	Active	Compliance	PbAHP
Case Outline	751-07	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	Y
Rail to Rail	Output	Channels	2
VS Min (V)	2.7	VS Max (V)	36
Iq Typ (mA)	0.41	VOS Max (mV)	4
GBW Typ (MHz)	3	SR Typ (V/µs)	2.5
IO Typ (mA)	50	ΔVOS/ΔT (μV/C)	2
eN (nV/√Hz)	30	Ibias Typ (pA)	5
CMRR Typ (dB)	145	Architecture	CMOS
Temperature Range (°C)	-40 to 125	Pricing ($/Unit)	$0.1984Sample