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MMBTA06LT1G

NPN Silicon Bipolar Transistor, TO-236 Package, 0.5A Collector Current, 80V Breakdown Voltage

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MMBTA06LT1G General Description

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

mmbta06lt1g mmbta06lt1g

Key Features

  • Miniature SOT-23 Surface Mount Package Saves Board Space
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
  • These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
mmbta06lt1g mmbta06lt1g

Application

  • Amplification: NPN transistors are commonly used as amplifiers in small-signal applications, such as audio amplification and signal conditioning.
  • Switching Circuits: NPN transistors can be used in digital logic circuits and other applications where switching between "on" and "off" states is required.
  • Signal Processing: It is used in signal processing circuits for tasks like filtering and modulation.
  • Voltage Regulation: NPN transistors can be used in voltage regulation circuits, including voltage references and voltage followers.
  • Signal Modulation: In radio frequency (RF) circuits, NPN transistors can be used for signal modulation and demodulation.
  • Oscillators: They can be used in oscillator circuits for generating various waveforms, such as square waves and triangular waves.
  • Pulse Generation: NPN transistors can be used to generate pulse signals for various applications, including timers and pulse-width modulation (PWM) control.
  • LED Driving: They can be used to drive LEDs (Light-Emitting Diodes) in lighting and display applications.
MMBTA06LT1G

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series -
Transistor Type NPN Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 225 mW Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number MMBTA06 Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 80 V Emitter- Base Voltage VEBO 4 V
Collector-Emitter Saturation Voltage 250 mV Maximum DC Collector Current 500 mA
Pd - Power Dissipation 225 mW Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Continuous Collector Current 500 mA Height 0.94 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.3 mm
Unit Weight 0.001058 oz

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Ratings and Reviews

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V
V**n 12/23/2022

Complete package was 50 days

7
C
C**r 08/30/2022

Quality is good.The parcel came faster than many.

18
J
J**b 03/14/2022

Just as described, works great!

16
I
I**c 02/17/2022

Super, all as picture

17

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MMBTA06LT1G Datasheet PDF

Preliminary Specification MMBTA06LT1G PDF Download

MMBTA06LT1G PDF Preview

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Availability: 5536 PCS

+BOM
Qty. Unit Price Ext. Price
10+ $0.037 $0.37
100+ $0.030 $3.00
300+ $0.026 $7.80
3000+ $0.021 $63.00
6000+ $0.019 $114.00
9000+ $0.018 $162.00

The prices below are for reference only.

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