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See Technical Specifications

MJE243G

NPN Bipolar Junction Transistor with 100V Voltage Capacity, 4A Current Rating, and 1500mW Power Dissipation in TO-225 Package

Manufacturer:

Onsemi
Mfr.Part #:

MJE243G
Datasheet:

MJE243G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

77-09
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for MJE243G

Email: [email protected]

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Tel: +852 95804164

MJE243G General Description

COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Key Features

High Collector-Emitter Sustaining Voltage -
V_CEO(sus) = 100 Vdc (Min) MJE243, MJE253
High DC Current Gain @ I_C = 200 mAdc
h_FE = 40-200
h_FE = 40-120 - MJE243, MJE253
Low Collector-Emitter Saturation Voltage -
V_CE(sat) = 0.3 Vdc (Max) @ I_C = 500 mAdc
High Current Gain Bandwidth Product -
f_T = 40 MHz (Min) @ I_C = 100 mAdc
Annular Construction for Low Leakages
I_CBO = 100 nAdc (Max) @ Rated V_CB
Pb-Free Packages are Available

Specifications

Status	Active	Compliance	PbAHP
Case Outline	77-09	MSL Type	NA
MSL Temp (°C)	0	Container Type	BLKBX
Container Qty.	500	ON Target	N
Polarity	NPN	Type	General Purpose
VCE(sat) Max (V)	0.6	IC Cont. (A)	4
VCEO Min (V)	100	VCBO (V)	100
VEBO (V)	7	VBE(sat) (V)	1.8
VBE(on) (V)	1.5	hFE Min	40
hFE Max	180	fT Min (MHz)	40
PTM Max (W)	15	Pricing ($/Unit)	$0.1804