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MJD112-1G +BOM
100V 2A 1.75W IPAK Transistor
DPAK INSERTION MOUNT-
Manufacturer:
-
Mfr.Part #:
MJD112-1G
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Datasheet:
-
Compliance:
PbAHP
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Case Outline:
369
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MSL Type:
1
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MSL Temp (°C):
260
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EDA/CAD Models:
Availability: 4060 PCS
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MJD112-1G General Description
Designed for reliability and performance, the MJD112-1G Darlington Bipolar Power Transistor is an excellent choice for general purpose power and switching applications. Whether you need it for output stages, switching regulators, converters, or power amplifiers, this transistor delivers the efficiency and versatility required for your projects. Its NPN design, combined with the complementary PNP MJD117, ensures that you have a comprehensive solution for your circuit design needs
Key Features
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
Specifications
Status | Active | Compliance | PbAHP |
Case Outline | 369 | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | TUBE |
Container Qty. | 75 | ON Target | N |
Polarity | NPN | IC Continuous (A) | 2 |
V(BR)CEO Min (V) | 100 | VCE(sat) Max (V) | 2 |
hFE Min (k) | 1 | hFE Max (k) | 12 |
fT Min (MHz) | 25 | Pricing ($/Unit) | $0.4121Sample |
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MJD112-1G Datasheet PDF
MJD112-1G PDF Preview
In Stock: 4,060
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for MJD112-1G, guaranteed quotes back within 12hr.
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