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See Technical Specifications

MAT01AH

Matched Monolithic Dual Transistor

Manufacturer: ADI
Mfr.Part #: MAT01AH
Datasheet: MAT01AH Datasheet (PDF)
Pbfree Code: No
Part Life Cycle Code: Not Recommended
Pin Count: 6
ECCN Code: EAR99
EDA/CAD Models: Request Free CAD Models for MAT01AH

Email: [email protected]

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Tel: +852 95804164

MAT01AH General Description

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matchingcharacteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and h_FE matching of 0.7%.

Key Features

Low V_OS (V_BE match): 40 μV typical, 100 μV maximum
Low TCV_OS: 0.5 μV/°C maximum
High h_FE: 500 minimum

Application

Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers

Specifications

Pbfree Code	No	Part Life Cycle Code	Not Recommended
Pin Count	6	ECCN Code	EAR99
HTS Code	8541.21.00.95	Additional Feature	LOW NOISE
Case Connection	SUBSTRATE	Collector Current-Max (IC)	0.025 A
Collector-Emitter Voltage-Max	45 V	Configuration	SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE)	500	JEDEC-95 Code	TO-78
JESD-30 Code	O-MBCY-W6	Number of Elements	2
Number of Terminals	6	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	NPN	Power Dissipation Ambient-Max	1.8 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	WIRE	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	450 MHz	VCEsat-Max	0.2 V