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See Technical Specifications

KSC2752OSTU +BOM

Trans GP BJT NPN 400V 0.5A 1000mW 3-Pin(3+Tab) TO-126 Tube

Manufacturer:

onsemi
Mfr.Part #:

KSC2752OSTU
Datasheet:

KSC2752OSTU Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for KSC2752OSTU

Email: [email protected]

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KSC2752OSTU General Description

The KSC2752OSTU transistor is a NPN silicon component with a maximum collector emitter voltage (V(br)ceo) of 400V and a collector current rating of 500mA. This transistor is housed in a TO-126-3 package with a power dissipation rating of 10W, making it suitable for medium power applications. With a DC current gain (hFE) of 30, this transistor provides amplification capabilities for various electronic circuits. The operating temperature range for this component is up to 150°C, allowing for reliable performance in harsh environments

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	KSC2752OSTU	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Collector Current-Max (IC)	0.5 A	Collector-Emitter Voltage-Max	400 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	30
JEDEC-95 Code	TO-126	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	10 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	3500 ns
Turn-on Time-Max (ton)	1000 ns