This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

KSC2073 +BOM

Bipolar (BJT) Transistor NPN 150 V 1.5 A 4MHz 25 W Through Hole TO-220-3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Bipolar (BJT) Transistor NPN 150 V 1.5 A 4MHz 25 W Through Hole TO-220-3

Source Content uid	KSC2073	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Collector Current-Max (IC)	1.5 A	Collector-Emitter Voltage-Max	150 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	40
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	25 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	4 MHz
VCEsat-Max	1 V	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	150 V	Collector- Base Voltage VCBO	150 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	1.5 A	Pd - Power Dissipation	25 W
Gain Bandwidth Product fT	4 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	1.5 A
DC Collector/Base Gain hfe Min	40	DC Current Gain hFE Max	140
Height	9.4 mm	Length	10.1 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	200
Subcategory	Transistors	Technology	Si
Width	4.7 mm	Unit Weight	0.080072 oz