This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

JS28F128P30TF75A

NOR Flash Parallel 128Mbit 16 56/56

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F128P30TF75A
Datasheet:

JS28F128P30TF75A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

56
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for JS28F128P30TF75A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F128P30TF75A General Description

FLASH - NOR Memory IC 128Mbit Parallel 40 MHz 75 ns 56-TSOP

Key Features

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	56	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	75 ns	Boot Block	TOP
Command User Interface	YES	Common Flash Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G56
JESD-609 Code	e3	Length	18.4 mm
Memory Density	134217728 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	4,127	Number of Terminals	56
Number of Words	8388608 words	Number of Words Code	8000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	8MX16
Page Size	8 words	Parallel/Serial	PARALLEL
Programming Voltage	1.8 V	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Sector Size	16K,64K
Standby Current-Max	0.000055 A	Supply Current-Max	0.05 mA
Supply Voltage-Max (Vsup)	2 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Toggle Bit	NO	Type	NOR TYPE
Width	14 mm	Write Cycle Time-Max (tWC)	0.000075 ms