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Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFM907NT1
DFN-16
Active
The AFM907NT1 is a Trans RF MOSFET N-CH 30V from NXP Semiconductors, packaged in an HVSON-16 format. This component is designed for robust and durable construction, offering real-time monitoring and data analysis capabilities. It features enhanced image processing algorithms, precise and reliable results, and easy integration into existing workflows. The AFM907NT1 is suitable for various applications, including groundbreaking advancements, advanced technology, scientific applications, industrial uses, cutting-edge research, and innovative solutions that revolutionize industries. Its parameters are not specified in the provided information. In summary, the AFM907NT1 is a high-performance RF MOSFET designed for real-time monitoring, data analysis, and image processing, making it an ideal component for various applications requiring precision and reliability.
According to the product information, the features of AFM907NT1 are:
Note that these features are related to image processing, measurement, and analysis.
The package type of the AFM907NT1 is HVSON-16, which is a 16-pin package.
According to the product information, the AFM907NT1 has a package type of HVSON-16, which indicates that it has a pin count of 16. As for its function, the product description mentions that it is a "Trans RF MOSFET N-CH 30V" device. This suggests that the AFM907NT1 is a power transistor designed for radio frequency (RF) applications, specifically operating at up to 30 volts and suitable for use in high-voltage switching circuits.
The manufacturer of the AFM907NT1 is NXP Semiconductors, a leading global semiconductor company that specializes in developing and manufacturing microcontrollers, processors, sensors, and other electronic components for various industries such as automotive, industrial, medical, and consumer electronics.
According to the product information, the application areas of AFM907NT1 are:
These applications highlight the potential uses of this Trans RF MOSFET N-CH 30V in various fields, including scientific and industrial settings.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Technology | LDMOS |
---|---|---|---|
Frequency | 136MHz ~ 941MHz | Gain | - |
Voltage - Test | 10.8 V | Current Rating (Amps) | 10µA |
Noise Figure | - | Current - Test | 100 mA |
Power - Output | 8.4W | Voltage - Rated | 30 V |
Mounting Type | Surface Mount | Base Product Number | AFM907 |
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 3 A | Vds - Drain-Source Breakdown Voltage | 30 V |
Rds On - Drain-Source Resistance | - | Operating Frequency | 136 MHz to 941 MHz |
Output Power | 8 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Forward Transconductance - Min | 9.8 S | Moisture Sensitive | Yes |
Number of Channels | 1 Channel | Pd - Power Dissipation | 65.7 W |
Product Type | RF MOSFET Transistors | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | LDMOS FET |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | - 6 V, 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V | Part # Aliases | 935346918515 |
Unit Weight | 0 oz | Package/Case | DFN-16 |
1.Q: Does the AFM907 meet automotive or PPAP compliance?
A: No, it is not automotive-qualified and does not support PPAP.
2.Q: What are the recommended operating conditions for the AFM907?
A: It operates at 7.5V with a maximum gate-source voltage of 12V and supports CW (continuous wave) mode.
3.Q: What is the typical power dissipation of the AFM907?
A: The maximum power dissipation is 6570 mW.
4.Q: What is the package type of the AFM907 RF transistor?
A: It comes in a 16-VDFN Exposed Pad (HVSON EP) surface-mount package with 16 pins.
5.Q: What is the operating temperature range of the AFM907?
A: It operates within a temperature range of -40°C to +150°C.
6.Q: What is the maximum drain-source voltage (Vds) for the AFM907?
A: The absolute maximum drain-source voltage (Vds) is 30V.
7.Q: What are the typical applications for the AFM907 transistor?
A: It is commonly used in RF power amplifiers for industrial, scientific, and medical (ISM) applications, base stations, and mobile communication systems.
8.Q: What are the key features of the NXP AFM907 Series RF Power LDMOS Transistor?
A: Key features include 7.5V operation, 136-941 MHz frequency range, 8.4W output power, 20.7dB typical power gain, 73.9% drain efficiency, and LDMOS technology in a compact DFN-6 package.
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Returns and exchanges are supported, provided the items remain in their original condition.
12/28/2023
Item has a good condition. Thanks to the seller. **SELLER RECOMMENDED**
11/30/2022
Very good delivery time.
06/24/2022
Thanks to the seller, everything came, as stated, pretty quickly to kamchatka. Sent right away. I'll buy more.Thanks to the seller, everything came, as stated, pretty quickly to kamchatka. Sent immediately. I will buy more.
09/30/2020
Arrived on time, the voltage is adjustable. No comments.
Preliminary Specification AFM907NT1 PDF
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Ext. Price
100+
$2.888
$288.80
30+
$2.932
$87.96
10+
$2.976
$29.76
1+
$3.043
$3.04
*The prices above are for reference only.
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