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JANTX2N2484 +BOM

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18

JANTX2N2484 General Description

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 50 mA Pd - Power Dissipation 360 mW
Gain Bandwidth Product fT - Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C DC Collector/Base Gain hfe Min 200 at 10 uA, 5 VDC
DC Current Gain hFE Max 500 at 10 uA, 5 VDC Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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