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JANTX2N2484 +BOM
Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18
TO-18-
Manufacturer:
-
Mfr.Part #:
JANTX2N2484
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Datasheet:
-
Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
60 V
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EDA/CAD Models:
Availability: 7072 PCS
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JANTX2N2484 General Description
Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 300 mV |
Maximum DC Collector Current | 50 mA | Pd - Power Dissipation | 360 mW |
Gain Bandwidth Product fT | - | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | DC Collector/Base Gain hfe Min | 200 at 10 uA, 5 VDC |
DC Current Gain hFE Max | 500 at 10 uA, 5 VDC | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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