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JANTX2N2219A +BOM

Can handle up to 50 volts and 800 mA of current

JANTX2N2219A General Description

The JANTX2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for use in various military and aerospace applications. It features a maximum collector-emitter voltage of 75V, a maximum collector current of 800mA, and a maximum power dissipation of 625mW. The transistor has a low noise figure of 1dB at 1kHz, making it suitable for use in high-frequency amplifiers and other low-noise applications. It also has a low base-emitter saturation voltage of 0.6V at 150mA, allowing for efficient switching operation.The JANTX2N2219A is housed in a hermetically sealed TO-39 package, which provides protection against environmental factors such as moisture and dust. It operates over a wide temperature range of -65°C to 200°C, making it suitable for use in harsh operating conditions.

Key Features

  • High current switching capability up to 800mA
  • Low noise figure of 3.5dB at 1kHz
  • High power dissipation of 300mW
  • Low leakage current of 100μA
  • Wide operating temperature range of -65°C to 200°C

Application

  • Military and aerospace applications
  • Civil aviation
  • Satellite communication systems
  • Radar systems
  • Guidance and control systems
  • Electronic warfare systems
  • Industrial power supplies
  • High-frequency amplifiers
  • Signal processing
  • Medical equipment

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 800 mA Pd - Power Dissipation 800 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 800 mA DC Collector/Base Gain hfe Min 50
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si

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