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JANTX2N2219A +BOM
Can handle up to 50 volts and 800 mA of current
TO-5-3-
Manufacturer:
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Mfr.Part #:
JANTX2N2219A
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Datasheet:
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Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
50 V
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EDA/CAD Models:
Availability: 4778 PCS
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JANTX2N2219A General Description
The JANTX2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for use in various military and aerospace applications. It features a maximum collector-emitter voltage of 75V, a maximum collector current of 800mA, and a maximum power dissipation of 625mW. The transistor has a low noise figure of 1dB at 1kHz, making it suitable for use in high-frequency amplifiers and other low-noise applications. It also has a low base-emitter saturation voltage of 0.6V at 150mA, allowing for efficient switching operation.The JANTX2N2219A is housed in a hermetically sealed TO-39 package, which provides protection against environmental factors such as moisture and dust. It operates over a wide temperature range of -65°C to 200°C, making it suitable for use in harsh operating conditions.
Key Features
- High current switching capability up to 800mA
- Low noise figure of 3.5dB at 1kHz
- High power dissipation of 300mW
- Low leakage current of 100μA
- Wide operating temperature range of -65°C to 200°C
Application
- Military and aerospace applications
- Civil aviation
- Satellite communication systems
- Radar systems
- Guidance and control systems
- Electronic warfare systems
- Industrial power supplies
- High-frequency amplifiers
- Signal processing
- Medical equipment
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 75 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 300 mV |
Maximum DC Collector Current | 800 mA | Pd - Power Dissipation | 800 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Continuous Collector Current | 800 mA | DC Collector/Base Gain hfe Min | 50 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Technology | Si |
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In Stock: 4,778
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