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JANTX2N2218A +BOM

Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag

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JANTX2N2218A General Description

Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39 (TO-205AD)

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 800 mA Pd - Power Dissipation 800 mW
Gain Bandwidth Product fT - Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 200 C Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Series -
Transistor Type NPN Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Power - Max 800 mW Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ) Grade Military
Qualification MIL-PRF-19500/251 Mounting Type Through Hole
Base Product Number 2N2218

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $29.077 $29.08
200+ $11.602 $2,320.40
500+ $11.215 $5,607.50
1000+ $11.023 $11,023.00

The prices below are for reference only.

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