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IXYH50N65C3D1

IGBT Transistors Disc XPT-GenX3 TO-247AD

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IXYH50N65C3D1 General Description

IGBT 650 V 132 A 600 W Through Hole TO-247 (IXTH)

ixyh50n65c3d1

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.73 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 132 A
Pd - Power Dissipation 600 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Continuous Collector Current Ic Max 250 A
Gate-Emitter Leakage Current 100 nA Product Type IGBT Transistors
Factory Pack Quantity 30 Subcategory IGBTs

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