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See Technical Specifications

IXTP56N15T

N-Channel 150 V 56A (Tc) 300W (Tc) Through Hole TO-220-3

Manufacturer:

IXYS
Mfr.Part #:

IXTP56N15T
Datasheet:

IXTP56N15T Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
Avalanche Energy Rating (Eas):

500 mJ
EDA/CAD Models:

Request Free CAD Models for IXTP56N15T

Email: [email protected]

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Tel: +852 95804164

IXTP56N15T General Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Key Features

International Standard Packages
Low R
DS(ON)
Avalanche rated
High Current Handling Capability
Fast Intrinsic Rectifier
Advantages:
Easy to Mount
Space Savings
High power density

Application

Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
Battery Chargers
Uninterrupted Power Supplies
AC motor drives
DC Choppers

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	500 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	56 A	Drain-source On Resistance-Max	0.036 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	50 pF
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	300 W	Pulsed Drain Current-Max (IDM)	140 A
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON