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See Technical Specifications

IRLL110TRPBF +BOM

N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

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Tel: +852 95804164

N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Surface-mount

Available in tape and reel

Dynamic dV/dt rating

Repetitive avalanche rated

Logic-level gate drive

RDS(on) specified at VGS = 4 V and 5 V

Fast switching

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	50 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	1.5 A
Drain-source On Resistance-Max	0.76 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	15 pF	JEDEC-95 Code	TO-261AA
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	3.1 W	Pulsed Drain Current-Max (IDM)	12 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON