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IRL620

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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tel Tel: +852 95804164

IRL620 General Description

N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Logic-level gate drive
  • RDS(on) specified at VGS = 4 V and 5 V
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • Specifications

    Pbfree Code No Part Life Cycle Code Transferred
    Reach Compliance Code compliant ECCN Code EAR99
    HTS Code 8541.29.00.95 Additional Feature LOGIC LEVEL COMPATIBLE
    Case Connection DRAIN Configuration SINGLE
    DS Breakdown Voltage-Min 200 V Drain Current-Max (ID) 5.2 A
    Drain-source On Resistance-Max 0.8 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
    JESD-609 Code e0 Number of Elements 1
    Number of Terminals 3 Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
    Power Dissipation Ambient-Max 50 W Power Dissipation-Max (Abs) 50 W
    Qualification Status Not Qualified Surface Mount NO
    Terminal Finish TIN LEAD Terminal Form THROUGH-HOLE
    Terminal Position SINGLE Transistor Element Material SILICON

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