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See Technical Specifications

IRFBC20PBF

N-Channel 600 V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB

Manufacturer:

VISHAY
Mfr.Part #:

IRFBC20PBF
Datasheet:

IRFBC20PBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

600 V
Current - Continuous Drain (Id) @ 25°C:

2.2A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRFBC20PBF

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Tel: +852 95804164

IRFBC20PBF General Description

Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Key Features

Dynamic dV/dt rating

Repetitive avalanche rated

Fast switching

Ease of paralleling

Simple drive requirements

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole