Payment Method
IPP60R165CP +BOM
MOSFET N-channel 650V 21A power transistor
TO-220-
Manufacturer:
-
Mfr.Part #:
IPP60R165CP
-
Datasheet:
-
RthJA max:
62.0 K/W
-
Operating Temperature min:
-55.0 °C
-
Ptot max:
192.0 W
-
VDS max:
600.0 V
-
EDA/CAD Models:
Availability: 7653 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IPP60R165CP General Description
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Key Features
- Lowest figure-of-merit RONxQg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant
Specifications
RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
Ptot max | 192.0 W | VDS max | 600.0 V |
VGS(th) max | 3.5 V | VGS(th) min | 2.5 V |
RthJC max | 0.65 K/W | IDpuls max | 61.0 A |
Polarity | N | ID max | 21.0 A |
RDS (on) max | 165.0 mΩ | Mounting | THT |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 7,653
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.762 | $5.76 |
10+ | $5.110 | $51.10 |
50+ | $4.723 | $236.15 |
100+ | $4.330 | $433.00 |
500+ | $4.149 | $2,074.50 |
1000+ | $4.068 | $4,068.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IPP60R165CP, guaranteed quotes back within 12hr.