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GRF5517W +BOM
RF Amplifier High Linearity Power Amplifier; 1.7 - 1.8 GHz; AEC-Q100 Grade 2 Qualified; High gain, two-stage InGaP HBT power amplifier
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Manufacturer:
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Mfr.Part #:
GRF5517W
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Datasheet:
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Mounting Style:
SMD/SMT
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Type:
Power Amplifiers
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Technology:
InGaP
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Operating Frequency:
1.7 GHz to 1.8 GHz
Availability: 7523 PCS
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GRF5517W General Description
RF Amplifier High Linearity Power Amplifier; 1.7 - 1.8 GHz; AEC-Q100 Grade 2 Qualified; High gain, two-stage InGaP HBT power amplifier
Specifications
Product Category | RF Amplifier | Mounting Style | SMD/SMT |
Type | Power Amplifiers | Technology | InGaP |
Operating Frequency | 1.7 GHz to 1.8 GHz | P1dB - Compression Point | 32 dBm |
Gain | 27.5 dB | Operating Supply Voltage | 5 V |
NF - Noise Figure | 5.4 dB | OIP3 - Third Order Intercept | 48 dBm |
Operating Supply Current | 305 mA | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 105 C | Qualification | AEC-Q100 |
Series | GRF5517 | Input Return Loss | 7 dB |
Isolation dB | 50 dB | Number of Channels | 2 Channel |
Pd - Power Dissipation | 1.4 W | Product Type | RF Amplifier |
Factory Pack Quantity | 1500 | Subcategory | Wireless & RF Integrated Circuits |
Test Frequency | 1.747 GHz |
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In Stock: 7,523
Minimum Order: 1
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