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GA20JT12-263

JFET 1200V 45A Standard

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GA20JT12-263 General Description

1200 V 45A (Tc) 282W (Tc) Surface Mount TO-263-7

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series -
FET Type - Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 60mOhm @ 20A
Vgs(th) (Max) @ Id - Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3091 pF @ 800 V FET Feature -
Power Dissipation (Max) 282W (Tc) Operating Temperature 175°C (TJ)
Mounting Type Surface Mount Base Product Number GA20JT12
Product Category: JFET Technology: SiC
Mounting Style: SMD/SMT Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV Id - Continuous Drain Current: 45 A
Rds On - Drain-Source Resistance: 50 mO Pd - Power Dissipation: 282 W
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C
Series: SiC Junction Transistor Packaging: MouseReel
Product Type: JFETs Factory Pack Quantity: 50
Subcategory: Transistors Unit Weight: 0.051147 oz

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Availability: 4302 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $30.132 $30.13
200+ $11.662 $2,332.40
500+ $11.252 $5,626.00
1000+ $11.050 $11,050.00

The prices below are for reference only.

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