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See Technical Specifications

FQPF33N10 +BOM

N-Channel 100 V 18A (Tc) 41W (Tc) Through Hole TO-220F-3

Manufacturer:

onsemi
Mfr.Part #:

FQPF33N10
Datasheet:

FQPF33N10 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQPF33N10

Email: [email protected]

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Tel: +852 95804164

FQPF33N10 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

18A, 100V, R_DS(on) = 52mΩ(Max.) @V_GS = 10 V, I_D = 9A
Low gate charge ( Typ. 38nC)
Low C_rss ( Typ. 62pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

LCD TV
PDP TV
LED TV

Specifications

Source Content uid	FQPF33N10	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	430 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.052 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	41 W	Pulsed Drain Current-Max (IDM)	72 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON