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FQP47P06

High-performance P-Channel Power MOSFET utilizing QFET® technology rated for -60V, -47A operation with a low on-resistance of 26 milliohms

Manufacturer:

Onsemi
Mfr.Part #:

FQP47P06
Datasheet:

FQP47P06 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for FQP47P06

Email: [email protected]

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Tel: +852 95804164

FQP47P06 General Description

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

-47A, -60V, R_DS(on) = 26mΩ(Max.) @V_GS = -10 V, I_D = -23.5A
Low gate charge ( Typ. 84nC)
Low C_rss ( Typ. 320pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

Other Audio & Video

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	47 A
Rds On - Drain-Source Resistance	26 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	110 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	160 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQP47P06
Configuration	Single	Fall Time	195 ns
Forward Transconductance - Min	21 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	450 ns	Factory Pack Quantity	50
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	100 ns
Typical Turn-On Delay Time	50 ns	Width	4.7 mm
Part # Aliases	FQP47P06_NL	Unit Weight	0.068784 oz