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See Technical Specifications

FQP17P06

channel power MOSFET

Manufacturer:

Onsemi
Mfr.Part #:

FQP17P06
Datasheet:

FQP17P06 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for FQP17P06

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Tel: +852 95804164

FQP17P06 General Description

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

-17A, -60V, R_DS(on) = 0.12Ω(Max.) @V_GS = -10 V, I_D = -8.5A
Low gate charge ( Typ. 21nC)
Low C_rss ( Typ. 80pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

Other Audio & Video

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	120 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	27 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	79 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQP17P06
Configuration	Single	Fall Time	60 ns
Forward Transconductance - Min	9.3 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	100 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	13 ns	Width	4.7 mm
Part # Aliases	FQP17P06_NL	Unit Weight	0.068784 oz