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FGY75T120SQDN

Power rating of 790000mW for Trans IGBT Chip

Manufacturer:

Onsemi
Mfr.Part #:

FGY75T120SQDN
Datasheet:

FGY75T120SQDN Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for FGY75T120SQDN

Email: [email protected]

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Tel: +852 95804164

FGY75T120SQDN General Description

The FGY75T120SQDN is a high-power, high-frequency silicon carbide MOSFET designed for various power applications requiring efficient and reliable performance. It has a maximum drain-source voltage of 1200V and a continuous drain current rating of 75A, making it suitable for high-power applications such as industrial motor drives, power supplies, and renewable energy systems.This MOSFET features a low on-state resistance of 75mΩ, which ensures minimal power loss and high efficiency during operation. The device also has a fast switching speed, enabling it to deliver precise and dynamic control in high-frequency power conversion applications.Furthermore, the FGY75T120SQDN is housed in a compact and thermally efficient package, allowing for easy integration into various power electronics systems while ensuring reliable thermal performance under high-power operation.

Key Features

75A current rating
1200V voltage rating
Schottky diode
Fast recovery time
Low forward voltage drop
High switching speed
Dual common cathode configuration

Application

Solar power inverters
Electric vehicle charging stations
Induction heating
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Motor drives

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.7 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	150 A
Pd - Power Dissipation	790 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	FGY75T120SQDN
Continuous Collector Current Ic Max	75 A	Gate-Emitter Leakage Current	200 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Unit Weight	0.480725 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

v**n 07/08/2020

Delivery to yekaterinburg 19 days. In the tape 102 pcs.-how to change in the backlight of the tv, then i will add the feedback. Thank you and good luck to the seller!