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CAS120M12BM2
Silicon Carbide N-channel Transistor with 1.2KV Voltage Rating, 193A Current Capacity, Packaged in a 7-Pin Box
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Manufacturer:
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Mfr.Part #:
CAS120M12BM2
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Datasheet:
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REACH:
Details
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Product:
Power MOSFET Modules
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Type:
Half-Bridge Module
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Technology:
SiC
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EDA/CAD Models:
Availability: 6578 PCS
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CAS120M12BM2 General Description
Mosfet Array 1200V (1.2kV) 193A (Tc) 925W Chassis Mount Module
Key Features
- CAS120M12BM2 is a 120A, 1200V three-phase low inductance SiC power module
- Includes six MOSFETs with parallel connected JBS diodes
- Optimized for fast-switching applications
- High-temperature soldering process for increased reliability
- Integrated NTC thermistor for temperature monitoring
- Designed for high efficiency and power density
Application
- Industrial automation
- Robotics
- Medical devices
- Security systems
- Consumer electronics
- Agricultural equipment
- Automotive industry
- Aviation and aerospace
- Military and defense
- Telecommunications
Specifications
Product Category | Discrete Semiconductor Modules | REACH | Details |
Product | Power MOSFET Modules | Type | Half-Bridge Module |
Technology | SiC | Vr - Reverse Voltage | 1.2 kV |
Vgs - Gate-Source Voltage | - 4 V, + 15 V | Mounting Style | Screw Mount |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 175 C |
Configuration | Half-Bridge | Height | 30 mm |
Id - Continuous Drain Current | 193 A | Length | 106.4 mm |
Product Type | Discrete Semiconductor Modules | Rds On - Drain-Source Resistance | 13 mOhms |
Factory Pack Quantity | 1 | Subcategory | Discrete Semiconductor Modules |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | Width | 61.4 mm |
Unit Weight | 12.805624 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 6578 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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