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See Technical Specifications

FDS8960C

Mosfet Array 35V 7A, 5A 900mW Surface Mount 8-SOIC

Manufacturer:

onsemi
Mfr.Part #:

FDS8960C
Datasheet:

FDS8960C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS8960C

Email: [email protected]

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FDS8960C General Description

These dual N- and P-channel enhancement mode power field effect transistors are produced using an advanced PowerTrench^® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

Q1: N-Channel
7.0 A, 35 V
R_DS(ON) = 24 mΩ @ V_GS = 10 V
R_DS(ON) = 32 mΩ @ V_GS = 4.5 V
Q2: P-Channel
-5 A, -35 V
R_DS(ON) = 53 mΩ @ V_GS = -10 V
R_DS(ON) = 87 mΩ @ V_GS = -4.5 V
Fast switching speed
RoHS compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDS8960C	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	FAST SWITCHING
Avalanche Energy Rating (Eas)	24.5 mJ	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	35 V	Drain Current-Max (ID)	7 A
Drain-source On Resistance-Max	0.024 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	2 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON