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FDS6990A

N-channel MOSFET transistor with matched pair in SO package

Manufacturer:

Onsemi
Mfr.Part #:

FDS6990A
Datasheet:

FDS6990A Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

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FDS6990A General Description

FDS6990A is a P-channel PowerTrench® MOSFET designed for applications such as load switching, DC-DC conversion, and high-side switch operations. It has a maximum drain-source voltage (VDS) of -60V and a continuous drain current of -12A. The MOSFET features low on-resistance of 0.055 ohms at VGS of -10V, providing efficient power management and reducing power loss.With a gate-source voltage (VGS) threshold of -2 to -4V, the FDS6990A allows for easy interfacing with standard logic level devices. This MOSFET is housed in a Power56 package, which offers low thermal resistance and excellent thermal performance, making it suitable for high-power applications.The FDS6990A also features a fast switching speed, with a typical rise time of 14ns and fall time of 12ns, allowing for efficient and precise control of power flow. It operates over a wide temperature range of -55°C to 150°C, ensuring reliable performance in harsh environmental conditions.

Key Features

The FDS6990A is a high voltage N-channel PowerTrench MOSFET with features such as a low on-resistance, high current carrying capability, and fast switching speeds

It is designed for applications requiring high efficiency and power density such as DC-DC converters, power supplies, motor drives, and lighting

It operates at a voltage range of -30V to 60V

Application

The FDS6990A is commonly used in applications such as power management, battery charging, LED lighting, and motor control

It can also be found in devices such as smartphones, tablets, laptops, and other portable electronics

Its low on-resistance and high power-handling capability make it suitable for various consumer electronic applications requiring high efficiency and reliability

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	7.5 A	Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	17 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDS6990A	Configuration	Dual
Fall Time	5 ns	Forward Transconductance - Min	33 S
Height	1.75 mm	Length	4.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	28 ns
Typical Turn-On Delay Time	10 ns	Width	3.9 mm
Part # Aliases	FDS6990A_NL	Unit Weight	0.006596 oz