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FDS4410

A 30V N-channel MOSFET encapsulated in SO-8 housing

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FDS4410 General Description

N-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Key Features

  • 10 A, 30 V. RDS(ON)= 0.0135 W @ VGS= 10 V
  • RDS(ON)= 0.0200 W @ VGS= 4.5 V.
  • Optimized for use in switching DC/DC converters with PWM controllers.
  • Very fastswitching .
  • Low gate charge (typical 22nC).

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 9.8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Series FDS4410
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 48 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 12 ns Width 3.9 mm
Unit Weight 0.004586 oz

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Availability: 4330 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.366 $0.37
200+ $0.141 $28.20
500+ $0.136 $68.00
1000+ $0.134 $134.00

The prices below are for reference only.

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