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Si8824EDB-T2-E1

MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8

Si8824EDB-T2-E1 General Description

N-Channel 20 V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Vishay Intertechnology, Inc Inventory
Vishay Intertechnology, Inc Original Stock
Vishay Intertechnology, Inc Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series TrenchFET®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 10 V
FET Feature - Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SI8824
N-Channel 20 V (D-S) MOSFET

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Si8824EDB-T2-E1 Datasheet PDF

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