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See Technical Specifications

FDS4141 +BOM

P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDS4141
Datasheet:

FDS4141 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS4141

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDS4141 General Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench^® technology to deliver low r_DS(on) and optimized BV_DSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

Key Features

Max r_DS(on) = 13.0mΩ at V_GS = -10V, I_D = -10.5A
Max rD_S(on) = 19.0mΩ at V_GS = -4.5V, I_D = -8.4A
High performance trench technology for extremely low r_DS(on)
RoHS Compliant

Application

This product is general usage and suitable for many different applications.
Control Switch in Synchronous & Non-Synchronous Buck
Load Switch
Inverter

Specifications

Source Content uid	FDS4141	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	294 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	10.8 A	Drain-source On Resistance-Max	0.013 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	5 W	Pulsed Drain Current-Max (IDM)	36 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON