This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDN5618P

channel 60v 1.25a on tape

Manufacturer:

Onsemi
Mfr.Part #:

FDN5618P
Datasheet:

FDN5618P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN5618P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDN5618P General Description

The FDN5618P is a N-channel PowerTrench MOSFET transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is designed for use in power management and load switching applications where high efficiency and low power consumption are desired. The FDN5618P has a drain-source voltage (VDS) rating of 20V and a continuous drain current (ID) of 5.4A, making it suitable for a wide range of low to medium power applications. It features a low on-resistance (RDS(on)) of 60mΩ at a gate-source voltage (VGS) of 4.5V, ensuring minimal power loss and heat generation during operation. This MOSFET transistor is housed in a small and compact package, specifically the PowerPAK SO-8, which allows for easy integration into space-constrained designs. It also has a low gate charge and fast switching speeds, enabling high efficiency and fast response times in switching applications.

Key Features

FDN5618P is a P-channel MOSFET transistor designed for low power applications

It has a low on-resistance of 0

08 ohms and a maximum drain current of 7

The transistor is housed in a compact SOT-23 package for easy integration into circuits

It is ideal for battery-powered devices and other applications requiring efficient power management

Application

The FDN5618P is commonly used in a variety of applications including load switch circuits, voltage regulation circuits, power management systems, and battery protection circuits

It is particularly suitable for low voltage applications requiring high efficiency and low power consumption

Additionally, it is commonly used in portable electronics, consumer electronics, and automotive systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.2 A	Rds On - Drain-Source Resistance	170 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	13.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN5618P	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	4.3 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	16.5 ns
Typical Turn-On Delay Time	6.5 ns	Width	1.4 mm
Part # Aliases	FDN5618P_NL	Unit Weight	0.001058 oz