This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDN360P

FDN360P is a PowerTrench MOSFET with a P-Channel design, packaged in a 3000-REEL format

Manufacturer:

Onsemi
Mfr.Part #:

FDN360P
Datasheet:

FDN360P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN360P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDN360P General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

-2 A, -30 V
R_DS(on) = 80 mΩ @ V_GS = -10 V
R_DS(on) = 125 mΩ @ V_GS = -4.5 V
Low Gate Charge (6.2nC typical)
High Performance Trench Technology for Extremely Low r_DS(on)
High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Application

This product is general usage and suitable for many different applications.
Battery Powered Circuits

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	2 A	Rds On - Drain-Source Resistance	63 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN360P	Configuration	Single
Fall Time	13 ns	Forward Transconductance - Min	5 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	6 ns	Width	1.4 mm
Part # Aliases	FDN360P_NL	Unit Weight	0.001058 oz