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FDN327N
FDN327N N-Channel MOSFET, 2 A, 20 V PowerTrench, 3-Pin SOT-23 ON Semiconductor
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Manufacturer:
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Mfr.Part #:
FDN327N
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 7150 PCS
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FDN327N General Description
Embedded - Microcontrollers 1 (Unlimited) 128-LQFP 76 7K x 8 Internal DMA, LCD, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit MCU 16-bit 78K0R CISC 128KB Flash 3.3V/5V 128-Pin LQFP
Key Features
- 2 A, 20 V
- RDS(ON) = 70 mΩ @ VGS = 4.5 V
- RDS(ON) = 80 mΩ @ VGS = 2.5 V
- RDS(ON) = 120 mΩ @ VGS = 1.8 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(on)
Application
- This product is general usage and suitable for many different applications.
- Load Switch
- Battery Protection
- Power Management
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 2 A | Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 6.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDN327N | Configuration | Single |
Fall Time | 6.5 ns | Forward Transconductance - Min | 11 S |
Height | 1.12 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 6.5 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 6 ns | Width | 1.4 mm |
Part # Aliases | FDN327N_NL | Unit Weight | 0.001058 oz |
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Availability: 7150 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
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