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FDMS86263P +BOM

P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS86263P
Datasheet:

FDMS86263P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86263P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMS86263P General Description

This P-Channel MOSFET is produced using an advanced PowerTrench^® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Key Features

Max r_DS(on)= 53 mΩ at V_GS= -10 V, I_D = -4.4 A
Max r_DS(on) = 64 mΩ at V_GS = -6 V, I_D = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Q_g
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant

Application

This product is general usage and suitable for many different applications

Specifications

Source Content uid	FDMS86263P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	99 Weeks, 6 Days
Avalanche Energy Rating (Eas)	384 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	4.4 A	Drain-source On Resistance-Max	0.053 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	104 W	Pulsed Drain Current-Max (IDM)	70 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON