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FDMS86163P

MOSFET PT5: High-Power P-Channel Transistor with Trench Technology, 100V/25V

FDMS86163P General Description

MOSFET, P-CH, -100V, -50A, POWER56-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.0178ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.8V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)

Key Features

  • Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
  • Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
  • Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant

Application

  • Mobile Comm Infrastructure

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 22 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 2.8 V Qg - Gate Charge 42 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename PowerTrench Series FDMS86163P
Configuration Single Fall Time 6.9 ns
Forward Transconductance - Min 29 S Height 1.1 mm
Length 6 mm Product Type MOSFET
Rise Time 8.8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 33 ns Typical Turn-On Delay Time 17 ns
Width 5 mm Unit Weight 0.002402 oz

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Availability: 4027 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.763 $1.76
10+ $1.498 $14.98
30+ $1.333 $39.99
100+ $1.163 $116.30
500+ $1.087 $543.50
1000+ $1.053 $1,053.00

The prices below are for reference only.