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FDMS6681Z

681Z is NTMFS005P03P8ZT1G

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

FDMS6681Z General Description

P-Channel 30 V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)

Key Features

  • Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A
  • Max rDS(on) = 5.0 mΩ at VGS = -4.5 V, ID = -15.7 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • HBM ESD protection level of 8kV typical (Note 3)
  • MSL1 robust package design
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 21.1 A
Rds On - Drain-Source Resistance 3.2 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 241 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Tradename PowerTrench Series FDMS6681Z
Configuration Single Fall Time 197 ns
Height 1.1 mm Length 6 mm
Product Type MOSFET Rise Time 38 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 260 ns
Typical Turn-On Delay Time 15 ns Width 5 mm
Unit Weight 0.002402 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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