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FDMC86259P +BOM

P-Channel PowerTrench® MOSFET -150V, -13A, 107mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC86259P
Datasheet:

FDMC86259P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC86259P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC86259P General Description

MOSFET, P-CH, -150V, -13A, POWER 33-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.8V; Power Dissipation Pd: 62W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Key Features

Max r_DS(on) = 107 mΩ at V_GS = -10 V, I_D= -3 A
Max r_DS(on) = 137 mΩ at V_GS = -6 V I_D= -2.7 A
Very low R_DS-on mid voltage P channel silicon technology optimised for low Q_g
This product is optimised for fast switching applications as well as load switch applications
100% UIL Tested
RoHS Compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDMC86259P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	24 Weeks
Avalanche Energy Rating (Eas)	181 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	3.2 A	Drain-source On Resistance-Max	0.107 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240BA
JESD-30 Code	S-PDSO-N5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	62 W
Pulsed Drain Current-Max (IDM)	20 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON