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FDMC5614P +BOM

ON Semiconductor's FDMC5614P is a P-Channel MOSFET designed for various electronic applications, delivering a current capacity of 5

Manufacturer:

Onsemi
Mfr.Part #:

FDMC5614P
Datasheet:

FDMC5614P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC5614P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC5614P General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).

Key Features

Max r_DS(on) = 100 mΩ @ V_GS = -10 V,I_D = -5.7A
Max r_DS(on) = 135 mΩ @ V_GS = -4.5 V,I_D = -4.4A
Low gate charge
Fast switching speed
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
RoHS Compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	13.5 A	Rds On - Drain-Source Resistance	84 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	20 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.1 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDMC5614P	Configuration	Single
Fall Time	11 ns	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	32 ns	Typical Turn-On Delay Time	10 ns
Width	3.3 mm	Unit Weight	0.007055 oz