This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDMC4435BZ

P-Channel 30 V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)

Manufacturer:

ON
Mfr.Part #:

FDMC4435BZ
Datasheet:

FDMC4435BZ Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC4435BZ

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC4435BZ General Description

This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench^® process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

Max r_DS(on) = 20.0mΩ at V_GS = -10V, I_D = -8.5A
Max r_DS(on) = 37.0mΩ at V_GS = -4.5V, I_D = -6.3A
Extended V_GSS range (-25V) for battery applications
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
HBM ESD protection level >7kV typical
100% UIL Tested
Termination is Lead-free and RoHS Compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	8.5 A	Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	53 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.3 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDMC4435BZ	Configuration	Single
Fall Time	20 ns	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	6 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	34 ns	Typical Turn-On Delay Time	10 ns
Width	3.3 mm	Unit Weight	0.007055 oz