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See Technical Specifications

FDMA6676PZ

Single P-Channel PowerTrench® MOSFET -30V, -11A, 13.5mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMA6676PZ
Datasheet:

FDMA6676PZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMA6676PZ General Description

This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V input, it is designed to support operating input voltages that can raise as high as 25V without the need for external Zener protection on the gate. Its small 2x2x0.8 form factor make it an ideal part for mobile and space constrained applications.

Key Features

Ultra Low RDS(on)
Advanced WDFN 2x2x0.65mm Package with Exposed Drain Pads
Pb−Free, Halogen Free/BFR Free

Application

Power Load Switch
Battery Management
Protection

Specifications

Source Content uid	FDMA6676PZ	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	ULTRA LOW RESISTANCE
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	11 A
Drain-source On Resistance-Max	0.0135 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	690 pF	JESD-30 Code	S-PDSO-N3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	2.4 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON