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See Technical Specifications

FDC655BN

30V 6.3A 1.6W 25mΩ@10V,6.3A 3V@250uA N Channel SSOT-6 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDC655BN
Datasheet:

FDC655BN Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDC655BN

Email: [email protected]

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Tel: +852 95804164

FDC655BN General Description

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

Max r_DS(ON) = 25 mΩ V_GS = 10V, I_D = 6.3A
Max r_DS(ON) = 33 mΩ V_GS = 4.5V, I_D = 5.5A
Fast switching
Low gate charge
High performance trench technology for extremely low r_DS(ON)
Termination is Lead-free and RoHS Compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	6.3 A
Rds On - Drain-Source Resistance	25 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	13 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.6 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDC655BN
Configuration	Single	Fall Time	4 ns
Forward Transconductance - Min	20 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	22 ns	Typical Turn-On Delay Time	8 ns
Width	1.6 mm	Part # Aliases	FDC655BN_NL
Unit Weight	0.001270 oz